 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features * Build in Biasing Circuit; To reduce using parts cost & PC board space. * Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain * Note 1 Marking is "BW-". * Note 2 BB302M is individual type number of HITACHI BBFET. BB102M Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 -0 10 25 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol Min V(BR)DSS V(BR)G1SS V(BR)G2SS 12 +10 10 -- -- 0.1 0.5 10 16 1.2 0.7 -- 16 -- Typ -- -- -- -- -- -- -- 15 21 1.6 1.1 0.011 20 2.1 Max -- -- -- +100 100 0.8 1.1 20 -- 2.2 1.5 0.03 -- 3.1 Unit V V V nA nA V V mA mS pF pF pF dB dB Test Conditions I D = 200A, VG1S = VG2S = 0 I G1 = +10A, VG2S = VDS = 0 I G2 = 10A, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = 9V, VG1S = VDS = 0 VDS = 9V, VG2S = 6V, ID = 100A VDS = 9V, VG1S = 9V, ID = 100A VDS = 9V, VG1 = 9V, VG2S = 6V RG = 560k VDS = 9V, VG1 = 9V, VG2S =6V RG = 560k, f = 1kHz VDS = 9V, VG1 = 9V VG2S =6V, RG = 560k f = 1MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 120k, f = 900MHz Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance I D(op) |yfs| c iss c oss Reverse transfer capacitance c rss Power gain Noise figure PG NF 2 BB102M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 Drain A ID Source Application Circuit VAGC = 6 to 0.3 V BBFET V DS = 9 V RFC Output Input RG V GG = 9 V 3 BB102M Maximum Channel Power Dissipation Curve Pch (mW) 200 I D (mA) 25 Typical Output Characteristics V G2S = 6 V V G1 = VDS 20 k 70 k 20 33 0 k 39 0 k 47 k 0 56 k 80 k 60 82 1M 1.5 M 150 Channel Power Dissipation 15 100 Drain Current 10 50 5 RG= 2 .2 M 0 50 100 150 Ta (C) 200 0 Ambient Temperature 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current vs. Gate2 to Source Voltage 25 V DS = V G1 = 9 V I D (mA) 20 k 330 k 390 k 470 k 0 k 56 0 68 k 820 1M 1.5 M Drain Current vs. Gate1 Voltage 20 I D (mA) V DS = 9 V R G = 470 k 16 k 270 6 V 5V 4V 3V 2V 15 12 Drain Current 10 Drain Current 8 5 RG= 2.2 M 4 V G2S = 1 V 0 2 4 6 8 V G1 (V) 10 0 1.2 2.4 3.8 Gate2 to Source Voltage 4.8 6.0 VG2S (V) Gate1 Voltage 4 BB102M Drain Current vs. Gate1 Voltege 20 I D (mA) I D (mA) V DS = 9 V R G = 560 k 6V 5V 4V 3V Drain Current vs. Gate1 Voltege 20 V DS = 9 V R G = 680 k 16 6V 5V 4V 3V 2V 16 12 12 Drain Current 8 2V Drain Current 8 4 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 4 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 Forward Transfer Admittance |y fs | (mS) 25 6V 5V 4V 3V Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance vs. Gate1 Voltage 25 6 V5 V 4V 3V 20 20 15 2V 15 2V 10 5 V DS = 9 V R G = 470 k f = 1 kHz V G2S = 1 V 10 5 V DS = 9 V R G = 560 k f = 1 kHz V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 5 BB102M Forward Transfer Admittance vs. Gate1 Voltage 25 Power Gain vs. Gate Resistance 30 25 4V V 3 2V Forward Transfer Admittance |y fs | (mS) Power Gain PG (dB) 20 6 V5 V 20 15 10 5 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 900 MHz 20 50 100 200 500 1000 Gate Resistance R G (k ) 15 10 V DS = 9 V R G = 680 k f = 1 kHz 5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 0 10 Noise Figure vs. Gate Resistance 4 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 900 MHz 30 25 Power Gain PG (dB) 20 15 10 5 0 10 Power Gain vs. Drain Current Noise Figure NF (dB) 3 2 1 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 900 MHz 5 10 15 20 25 30 35 40 20 50 100 200 500 1000 0 Gate Resistance R G (k ) Drain Current I D (mA) 6 BB102M Noise Figure vs. Drain Current 4 40 V DS = 9 V V G1 = 9 V V G2S = 6 V Drain Current vs. Gate Resistance 3 Drain Current I D (mA) Noise Figure NF (dB) 30 2 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 900 MHz 5 10 15 20 25 30 35 40 20 1 10 0 0 10 20 50 100 200 500 1000 Drain Current I D (mA) Gate Resistance R G (k ) Gain Reduction vs. Gate2 to Source Voltage 50 Gain Reduction GR (dB) V DS = 9 V V G1 = 9 V V G2S = 6 V R G = 560 k f = 900 MHz Input Capacitance Ciss (pF) 3 Input Capacitance vs. Gate2 to Source Voltage 40 2 30 20 1 V DS = 9 V V G1 = 9 V R G = 560 k f = 1 MHz 0 1 2 3 4 5 6 10 0 1 2 3 4 5 6 7 Gate2 to Source Voltage V G2S (V) Gate2 to Source Voltage V G2S (V) 7 BB102M S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 1 / div. 60 -150 -30 Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.01 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k 50 to 1000 MHz (50 MHz step) 8 BB102M Sparameter (VDS = VG1 = 9V, VG2S = 6V, RG = 560k, Zo = 50) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.995 0.991 0.987 0.985 0.975 0.969 0.954 0.948 0.933 0.923 0.912 0.892 0.882 0.868 0851 0.834 0.815 0.801 0.788 0.768 ANG -2.9 -6.0 -9.4 -12.4 -15.4 -18.4 -21.5 -24.6 -27.5 -30.7 -33.6 -36.3 -39.3 -42.0 -45.0 -47.7 -50.6 -53.5 -55.9 -58.5 S21 MAG 2.22 2.21 2.21 2.19 2.18 2.15 2.12 2.11 2.08 2.05 2.02 1.99 1.96 1.92 1.90 1.87 1.83 1.82 1.79 1.77 ANG 176.0 172.0 168.0 163.6 159.3 155.3 151.7 147.6 143.7 139.9 136.2 123.9 128.7 125.4 122.0 117.9 114.9 111.2 107.8 104.4 S12 MAG 0.00046 0.00109 0.00122 0.00180 0.00228 0.00246 0.00273 0.00331 0.00334 0.00357 0.00328 0.00305 0.00322 0.00297 0.00286 0.00273 0.00226 0.00143 0.00131 0.00189 ANG 66.9 90.4 76.5 81.9 86.0 78.8 76.2 66.9 74.7 68.4 67.5 69.8 66.7 70.3 74.4 71.9 88.1 95.5 98.6 145.2 S22 MAG 0.977 0.987 0.987 0.985 0.983 0.981 0.979 0.976 0.973 0.969 0.965 0.961 0.958 0.953 0.948 0.944 0.940 0.934 0.931 0.925 ANG -1.0 -3.2 -5.0 -6.7 -8.4 -10.0 -11.7 -13.4 -14.9 -16.8 -18.3 -19.9 -21.5 -23.4 -24.7 -26.2 -27.9 -29.4 -31.0 -32.9 9 BB102M Package Dimensions Unit: mm 2.8 - 0.1 + 0.3 0.65 - 0.3 + 0.1 1.9 0.95 0.95 0.4 - 0.05 + 0.1 0.4 - 0.05 + 0.1 0.16 + 0.1 - 0.06 3 2 + 0.2 2.8 - 0.6 4 0.4 - 0.05 0.95 1.8 + 0.1 1 0.6 - 0.05 0.85 0.65 - 0.3 + 0.1 + 0.1 0.3 1.1 - 0.1 + 0.2 1.5 0 ~ 0.1 Hitachi Code EIAJ JEDEC MPAK-4 SC-61AA -- 10 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
Price & Availability of BB102M
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |